2N0404 datasheet(4/7 Pages) VBSEMI

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

100

125

150

TJ -Junction Temperature (°C)

VGS =10 V

ID =30A

VGS =4.5 V

0.000

0.002

0.004

0.006

0.008

0.010

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 150 °C

Forward Diode Voltage vs. Temperature

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD -Source-to-Drain Voltage (V)

0.01

0.001

0.1

100

TJ = 25 °C

TJ = 150 °C

- 1.0

- 0.6

- 0.2

0.2

0.6

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

ID =5mA

Safe Operating Area, Junction-to-Ambient

0.01

0.1

100

1000

0.1

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

TC = 25 °C

Single Pulse

BVDSS

Limited byRDS(on)*

100 ms, DC

10 ms

1ms

10 µs

100 µs

2N0404 TO220

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