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SE050 Datasheet(PDF) 21 Page - NXP Semiconductors |
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SE050 Datasheet(HTML) 21 Page - NXP Semiconductors |
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21 / 30 page ![]() NXP Semiconductors SE050 Plug & Trust Secure Element SE050 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2020. All rights reserved. Product data sheet Rev. 3.0 — 12 May 2020 504930 21 / 30 aaa-037451 70 % level Vhigh tCLKW CLK (et al) Vlow 0.5 VDD 1/fCLK tfCLK tfRST tfIO trCLK trRST trIO 30 % level 1) During AC testing the inputs RST_N, I2C_SDA, I2C_SCL are driven at 0 V to +0.3 V for a LOW input level and at VCC -0.3 V to VCC for a HIGH input level. Clock period and signal pulse (duty cycle) timing is measured at 50 % of VCC. 2) tr is defined as rise time between 30 % and 70 % of the signal amplitude. tf is defined as fall time between 70 % and 30 % of the signal amplitude. Figure 10. External clock drive and AC test timing reference points of I2C_SDA, I2C_SCL, and RST_N (see 1) and 2)) in open-drain mode Table 15. Electrical AC characteristics of IO1, IO2, CLK and RST_N (ISO7816 interface) Conditions: VCC = 1.8 V ± 10 % or 3 V ± 10 % V; VSS = 0 V; Tamb = -40 °C to +105 °C, unless otherwise specified. Typical values are only referenced for information. They are subject to change without notice. Symb ol Parameter Conditions Min Typ Max Unit Input/Output: IO1/IO2 [1] [2] 1 μs trIO I/O Input rise time Input/reception mode [3] [2] 0.25 x tIOWx_min μs tfIO I/O Input fall time Input/reception mode [1] [2] 1 μs [3] [2] 0.25 x tIOWx_min μs trOIO I/O Output rise time Output/transmission mode; CL = 30 pF [2] 0.1 μs tfOIO I/O Output fall time Output/transmission mode; CL = 30 pF [2] 0.1 μs Inputs: CLK and RST_N fCLK External clock frequency in ISO/IEC 7816 UART applications tCLKW, tamb and VCC in their specified limits [4] 0.85 11.5 MHz tCLKW Clock pulse width i.r.t. clock period (positive pulse duty cycle of CLK) 40 60 % trCLK CLK input rise time [5] [6] tfCLK CLK input fall time [2] [6] [6] trRST RST_N input rise time [2] 400 μs tfRST RST_N input fall time [2] [7] 400 μs |
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