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WSF2060 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WSF2060
Description  N-Ch MOSFET
PDF  5 Pages
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Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF2060 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
20
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.028
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=
4.5V , ID=30A
---
3.9
5.5
m
Ω
VGS=
2.5V , ID=20A
---
5.8
8.0
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
0.5
0.75
1.0
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-6.16
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=
20V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=2
0V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=30A
15
---
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.
0
3.1
Ω
Qg
Total Gate Charge (4.5V)
VDS=15V , VGS=4.5V , ID=15A
---
27
---
nC
Qgs
Gate-Source Charge
---
6.5
---
Qgd
Gate-Drain Charge
---
6.4
---
Td(on)
Turn-On Delay Time
VDD=15V , VGS=10V , RG=3.3Ω
ID=15A
---
6.4
---
ns
Tr
Rise Time
---
17.2
---
Td(off)
Turn-Off Delay Time
---
29.6
---
Tf
Fall Time
---
16.8
---
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
2
000
---
pF
Coss
Output Capacitance
---
500
---
Crss
Reverse Transfer Capacitance
---
200
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
60
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
V
trr
Reverse Recovery Time
IF=
20A , dI/dt=100A/µs , TJ=25℃
---
25
---
nS
Qrr
Reverse Recovery Charge
---
24
---
nC
Diode Characteristics
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WSF2060
N-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
5.
EAS condition : Tj=25℃,VDD=10V,VG=10V,L=0.5mH,Rg=25Ω，



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