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WSP4067B Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSP4067B Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 10 page ![]() Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.06 7 --- V/℃ VGS=10V , ID= 6A --- 25 35 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V , ID= 5A --- 40 55 m Ω VGS(th) Gate Threshold Voltage 1.0 1.6 2.2 V △ VGS(th) VGS(th) Temperature Coefficient VGS=VDS , ID =250uA --- -5.24 --- mV/℃ VDS= 32V , VGS=0V , TJ=85℃ --- --- 1 IDSS Drain-Source Leakage Current VDS= 32V , VGS=0V , TJ=85℃ --- --- 30 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA Qg Total Gate Charge --- 11 --- Qgs Gate-Source Charge --- 2 --- Qgd Gate-Drain Charge VDS= 20V , VGS=10V , ID=6A --- 2.2 --- nC Td(on) Turn-On Delay Time --- 1.9 --- Tr Rise Time --- 18.6 --- Td(off) Turn-Off Delay Time --- 8.7 --- Tf Fall Time --- 2.6 --- ns Ciss Input Capacitance --- 600 --- Coss Output Capacitance --- 62 --- Crss Reverse Transfer Capacitance VDS= 20V , VGS=0V , f=1MHz --- 48 --- pF Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current --- --- 2.6 A TA=25°C. VSD Diode Forward Voltage VGS=0V , IS= 1A --- --- 1. 3 V N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics WSP4067B N&P-Channel MOSFET Page 2 www.winsok.tw Dec.2014 A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VDS = 20 V, VGEN = 10 V, RG = 3.3 Ω, RL = 3.3 Ω, IDS = 6 A . |
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