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WSP4099 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WSP4099
Description  Dual P-Channel MOSFET
PDF  5 Pages
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Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSP4099 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-40
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.02
---
V/℃
VGS=-10V , ID=-
6.5A
---
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-4.5V , ID=-
4.5A
---
m
Ω
VGS(th)
Gate Threshold Voltage
-1.
5
-
2.0
-2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =-250uA
---
3.72
---
V/℃
VDS=-32V , VGS=0V , TJ=25℃
---
---
1
IDSS
Drain-Source Leakage Current
VDS=-32V , VGS=0V , TJ=55℃
---
---
5
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-
4A
---
8
---
S
Qg
Total Gate Charge (-4.5V)
---
7.5
---
Qgs
Gate-Source Charge
---
2.4
---
Qgd
Gate-Drain Charge
VDS=-
20V , VGS=-4.5V , ID=-6.5A
---
3.5
---
nC
Td(on)
Turn-On Delay Time
---
8.7
---
Tr
Rise Time
---
7
---
Td(off)
Turn-Off Delay Time
---
31
---
Tf
Fall Time
VDD=-15V , VGS=-10V , RG=
6Ω,
ID=-1A
,RL=20Ω
---
17
---
ns
Ciss
Input Capacitance
---
668
---
Coss
Output Capacitance
---
98
---
Crss
Reverse Transfer Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
72
---
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=-25V , L=0.
5mH , IAS=-10A
20
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
---
---
-
2
A
ISM
Pulsed Source Current
2,6
VG=VD=0V , Force Current
---
---
-
22
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1.
0
V
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.
The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.5mH,IAS=-10A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Guaranteed Avalanche Characteristics
Diode Characteristics
30
38
46
62
WSP4099
Page 1
www.winsok.tw
Rev 2:Dec.2019
Dual P-Channel MOSFET



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