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WSP4982 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSP4982 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 6 page ![]() Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V RDS(ON)c Static Drain-Source On-Resistance 2 VGS=10V , ID= 6.0A --- 28 m Ω VGS=4.5V , ID= 5.0A --- 33 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1. 0 1. 6 2.5 V IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=55℃ --- --- 30 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA Qgd Total Gate Charge (4.5V) VDS= 20V , VGS=4.5V , ID=6A --- 7.5 --- nC Qgs Gate-Source Charge --- 3.24 --- Qgd Gate-Drain Charge --- 2.75 --- Td(on) Turn-On Delay Time VDD= 20V,VGEN=10V,RG=6Ω , ID= 1A,RL=20Ω. --- 7.8 ns Tr Rise Time --- 6.9 Td(off) Turn-Off Delay Time --- 22.4 Tf Fall Time --- 4.8 Ciss Input Capacitance VDS= 20V , VGS=0V , f=1MHz --- 815 pF Coss Output Capacitance --- 95 Crss Reverse Transfer Capacitance --- 60 Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Page 2 www.winsok.tw Rev 1: Dec.2019 WSP4982 Dual N-Channel MOSFET 24 28 --- --- --- --- --- --- --- Note c:Pulse test ; pulse width £300 ms, duty cycle£2%. Note d:Guaranteed by design, not subject to production testing. |
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