WST02N20 datasheet(2/9 Pages) WIINSOK

2 / 9 page

WST02N20

Page 2

www.winsok.tw

Dec.2014

N-Ch MOSFET

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250µA

200

IDSS

Zero Gate Voltage Drain Current

VDS=160V, VGS=0V

µA

TJ=85°C

VGS(th)

Gate Threshold Voltage

DS=VGS, IDS=250µA

IGSS

Gate Leakage Current

VGS=±25V, VDS=0V

±10

µA

RDS(ON)

Drain-Source On-state Resistance

VGS=10V, IDS=1A

680

Ω

Diode Characteristics

VSD

Diode Forward Voltage

ISD=1A, VGS=0V

0.8

1.3

trr

Reverse Recovery Time

ISD=1A, dlSD/dt=100A/

µs

Qrr

Reverse Recovery Charge

Dynamic Characteristics

Gate Resistance

GS=0V,VDS=0V,f=1MHz

Ω

iss

Input Capacitance

VGS=0V,

DS=30V,

Frequency=1.0MHz

280

oss

Output Capacitance

rss

Reverse Transfer Capacitance

8.5

d(O N)

Turn-on Delay Time

VDD=30V, RL=30

Ω,

IDS=1A, VGEN=10V,

RG=6

Ω

Turn-on Rise Time

d(OFF)

Turn-off Delay Time

Turn-off Fall Time

Gate Charge Characteristics

Total Gate Charge

VDS=100V, VGS=10V,

IDS=1A

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

1.5

Note d：Pulse test ; pulse width

≤300µs, duty cycle≤2%.

Note e：Guaranteed by design, not subject to production testing.

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