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WST03P06 Datasheet(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WST03P06
Description  P-Channel MOSFET
PDF  5 Pages
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Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WST03P06 Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WST03P06 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST03P06 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST03P06 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST03P06 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST03P06 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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background image
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-60
V
VGS
Gate-Sou
rce Voltage
±
20
V
ID@TC=25℃
Continuous Drain Current, -VGS @ -10V
1
-3.5
A
ID@TC=100℃
Continuous Drain Current, -VGS @ -10V
1
-2.8
A
IDM
Pulsed Drain Current
2
-20
A
PD@TC=25℃
Total Power Dissipation
3
1.0
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction-Ambient
1
---
125
℃
/W
RθJC
Thermal Resistance Junction-Case
1
---
80
℃
/W
BVDSS
RDSON
ID
-60V
180mΩ
-
3.5A
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
General Description
Features
Applications
High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch
Absolute Maximum Ratings
Thermal Data
SOT-23-3L Pin Configuration
Product Summery
The WST30P06 is the highest performance trench
P-ch MOSFET with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The WST30P06 meet the RoHS and Green Prod
uct requirement with full function reliability appro
ved.
WST03P06
P-Channel MOSFET
Page 1
www.winsok.tw
Dec.2014


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