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WST2008 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WST2008 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 6 page ![]() Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 20 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.02 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=2.5V , ID=10mA --- 20 40 Ω VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.5 --- 1.5 V △ VGS(th) VGS(th) Temperature Coefficient --- -2.5 --- mV/℃ IDSS Drain-Source Leakage Current VDS=20V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=20V , VGS=0V , TJ=125℃ --- --- 50 IGSS Gate-Source Leakage Current VGS=±10V , VDS=0V --- --- ± 10 nA Td(on) Turn-On Delay Time VDD=3V , VGS=2.5V , RG=150Ω ,ID=0.2A --- 140 --- ns Td(off) Turn-Off Delay Time --- 140 --- Ciss Input Capacitance VDS=3V , VGS=0V , f=1MHz --- 5.5 pF Coss Output Capacitance --- 1.6 Crss Reverse Transfer Capacitance --- 6.5 Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Page 2 www.winsok.tw Dec.2014 WST2008 Dual N-Channel MOSFET --- --- --- |
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