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TN2501 Datasheet(PDF) 1 Page - Microchip Technology |
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TN2501 Datasheet(HTML) 1 Page - Microchip Technology |
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1 / 14 page  2018 Microchip Technology Inc. DS20005948A-page 1 TN2501 Features • Low Threshold • High Input Impedance • 110 pF Maximum Low-Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Operated Systems • Photovoltaic Drives • Analog Switches • General Purpose Line Drivers • Telecommunication Switches General Description The TN2501 low-threshold Enhancement-mode (normally-off) transistor uses a vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. Package Type See Table 3-1 for pin information. 3-lead SOT-89 (Top view) GATE SOURCE DRAIN DRAIN N-Channel Enhancement-Mode Vertical DMOS FET |
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