2SC2757 datasheet(1/2 Pages) YFWDIODE

Part #	2SC2757

Description	NPN RF Transistors

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Manufacturer	YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]

Direct Link	http://www.yfwdiode.com/

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2SC2757 SOT-23

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www.yfwdiode.com

Dongguan YFW Electronics Co, Ltd.

DESCRIPTION

Low Noise

High Current-Gain Bandwidth Product

APPLICATIONS

Designed for use in VHF RF amplifier, local oscillator, mixer.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

15

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

50

mA

PC

Collector Power Dissipation

@TC=25℃

0.15

W

TJ

Junction Temperature

125

℃

Tstg

Storage Temperature Range

-55~125

℃

ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 10mA ; IB= 1mA

0.5

V

ICBO

Collector Cutoff Current

VCB= 12V; IE= 0

0.1

μA

hFE

DC Current Gain

IC= 5mA ; VCE= 10V

60

240

fT

Current-Gain—Bandwidth Product

IC= 5mA ; VCE= 10V

800

1100

MHz

COB

Output Capacitance

IE= 0 ; VCB= 10V;f= 1.0MHz

1.5

pF

rbb’ • CC

Base Time Constant

IC= 5mA ; VCB= 10V;f= 31.9MHz

10

15

ps

1

2

3

1.Base

2.Emitter

3.Collector

■

Simplified outline(SOT-23)

NPN RF Transistors

■

●

■

●

hFE Classifications

Marking

T32

T33

T34

hFE

60-120

90-180

120-240

■

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2SC2757 Datasheet(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

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