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TN2124 Datasheet(PDF) 1 Page - Microchip Technology |
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TN2124 Datasheet(HTML) 1 Page - Microchip Technology |
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1 / 14 page  2018 Microchip Technology Inc. DS20005698A-page 1 TN2124 Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-Drain Diode • High Input Impedance and High Gain Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Operated Systems • Photovoltaic Drives • Analog Switches • General Purpose Line Drivers • Telecommunication Switches General Description The TN2124 low-threshold Enhancement-mode (normally-off) transistor uses a vertical Diffusion Metal-Oxide Semiconductor (DMOS) structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. Package Type 3-lead SOT-23 (Top view) See Table 3-1 for pin information. DRAIN SOURCE GATE N-Channel Enhancement-Mode Vertical DMOS FET |
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