P6015CSG datasheet(2/5 Pages) UNIKC

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P6015CSG

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

150

0.45

0.8

1.2

±100

8096

159

124

2.5

240

115

338

384

1.3

119

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

Drain-Source On-State

Resistance

RDS(ON)

VGS = 5V, ID = 10A

mΩ

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

UNITS

SYMBOL

Gate-Body Leakage

VGS(th)

Forward Transconductance

VDS =100V, VGS = 0V, TJ = 100°C

VGS = 10V, ID = 15A

VDS =120V, VGS = 0V , TC = 25 °C

Gate Voltage Drain Current

IGSS

Gate Threshold Voltage

VDS = VGS, ID = 250mA

VDS =5V, ID =15A

Input Capacitance

Qgd

VDD = 75V, ID = 15A, VGS = 10V

Output Capacitance

Total Gate Charge

DYNAMIC

gfs

PARAMETER

Qgs

TEST CONDITIONS

VSD

VDD = 75V,ID = 15A, RG= 25Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

td(on)

td(off)

Qrr

Reverse Recovery Charge

Continuous Current

Forward Voltage

Reverse Recovery Time

V(BR)DSS

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

trr

IF = 15A, VGS = 0V

Fall Time

Gate-Drain Charge

Gate-Source Charge

Reverse Transfer Capacitance

STATIC

Drain-Source Breakdown Voltage

VGS = 0V, VDS = 25V, f = 1MHz

Ciss

IF = 15A, dlF/dt = 100A / μS

VDS = 0V, VGS = ±12V

IDSS

Coss

Crss

LIMITS

VGS = 0V, ID = 250mA

REV 1.0

2014-11-10

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