IXFN55N50 datasheet(1/4 Pages) IXYS

Part #	IXFN55N50

Description	HiPerFET Power MOSFET

PDF	4 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 4 page

S

G

S

D

miniBLOC, SOT-227 B (IXFN)

E153432

TO-264 AA (IXFK)

Features

• International standard packages

• Encapsulating epoxy meets

UL 94 V-0, flammability classification

• miniBLOC with Aluminium nitride

isolation

• Low R

DS (on) HDMOS

TM

process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

• Fast intrinsic Rectifier

Advantages

• PLUS247 package for clip or spring

bar mounting

• Easy to mount

• Space savings

• High power density

G = Gate

D

= Drain

S = Source

TAB = Drain

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

S

G

D

D (TAB)

DS97502G(11/04)

HiPerFETTM

Power MOSFET

Single Die MOSFET

IXFK 55N50

IXFX 55N50

IXFN 55N50

V

DSS

= 500 V

I

D25

=55 A

R

DS(on)

=

90m

Ω

t

rr

≤≤≤≤≤ 250 ns

PLUS247(IXFX)

G

C

E

(TAB)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min. Typ.

Max.

V

DSS

V

GS = 0 V, ID = 1 mA

500

V

GS(th)

V

DS = VGS, ID = 8 mA

2.5

4.5

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±200

nA

I

DSS

V

DS = VDSS

25

µA

V

GS = 0 V

T

J = 125°C2

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

90

m

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

500

V

DGR

T

J = 25°C to 150°C

500

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C55

A

I

DM

T

C = 25°C, pulse width limited by TJM

220

A

I

AR

T

C = 25°C55

A

E

AR

T

C = 25°C60

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS

10

V/ns

T

J ≤ 150°C, RG = 4 Ω

P

D

T

C = 25°C

625

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s (IXFK, IXFX)

300

°C

M

d

Mounting torque

(IXFK, IXFX)

1.13/10 Nm/lb.in.

Terminal leads

(IXFN)

1.13/10 Nm/lb.in.

V

ISOL

50/60 Hz, RMS

(IXFN)

t = 1minute

2500

V~

I

ISOL ≤

≤≤≤≤ 1 mA

t = 1 s

3000

V~

Weight

PLUS247

5

g

TO-264

10

g

SOT-227B

30

g

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