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IXGH32N60AS Datasheet(PDF) 2 Page - IXYS Corporation |
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IXGH32N60AS Datasheet(HTML) 2 Page - IXYS Corporation |
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2 / 2 page ![]() IXYS Semiconductor GmbH Edisonstr. 15,D-68623 Lampertheim Phone: +49-6206-503-0 Fax: +49-6206-503627 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 IXGH 32N60A IXGH 32N60AS Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. g fs I C = I C90 ; VCE = 10 V, 15 20 S Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % C ies 2500 pF C oes V CE = 25 V, VGE = 0 V, f = 1 MHz 230 pF C res 70 pF Q g 125 150 nC Q ge I C = IC90, VGE = 15 V, VCE = 0.5 VCES 23 35 nC Q gc 50 75 nC t d(on) 25 ns t ri 30 ns t d(off) 120 200 ns t fi 125 175 ns E off 1.8 mJ t d(on) 25 ns t ri 35 ns E on 1mJ t d(off) 140 ns t fi 260 ns E off 4.0 mJ R thJC 0.62 K/W R thCK 0.25 K/W Inductive load, T J = 25° °°°°C I C = IC90, VGE = 15 V, L = 100 µH, V CE = 0.8 VCES, RG = Roff = 4.7 Ω Remarks: Switching times may increase for V CE (Clamp) > 0.8 • VCES, higher T J or increased RG TO-247 AD Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 1 2.2 2.54 .087 .102 A 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC 1. Gate 2. Collector 3. Emitter 4. Collector Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A1 2.29 2.54 .090 .100 A2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b1 1.91 2.13 .075 .084 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 4.90 5.10 .193 .201 L1 2.70 2.90 .106 .114 L2 2.10 2.30 .083 .091 L3 0.00 0.10 .00 .004 L4 1.90 2.10 .075 .083 ØP 3.55 3.65 .140 .144 Q 5.59 6.20 .220 .244 R 4.32 4.83 .170 .190 S 6.15 BSC .242 BSC e ∅ P Min. Recommended Footprint (Dimensions in inches and mm) TO-247 SMD Outline IXGH 32N60A and IXGH 32N60AS characteristic curves are located in the IXGH 32N60AU1 data sheet. Remarks: Switching times may increase for V CE (Clamp) > 0.8 • VCES , higher T J or increased RG IXYS reserves the right to change limits, test conditions, and dimensions. |
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