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PD6B2BA Datasheet(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PD6B2BA Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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1 / 8 page  PD6B2BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 100% UIS Tested 100% Rg Tested TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 39A. 48 Junction-to-Ambient RqJA Avalanche Current °C / W Junction & Storage Temperature Range SYMBOL °C -55 to 150 EAS THERMAL RESISTANCE TYPICAL PD Pulsed Drain Current 1 IDM TC = 100 °C Power Dissipation Tj, Tstg TC = 100 °C SYMBOL 31 mJ 19 30 62.5 IAS L = 0.1mH Avalanche Energy TC = 25 °C PARAMETERS/TEST CONDITIONS RDS(ON) 6.2mΩ @V GS = 10V 63A Gate-Source Voltage ID TC = 25 °C 30V Continuous Drain Current 2 Drain-Source Voltage ID Junction-to-Case RqJC ±20 63 A VGS V MAXIMUM W UNITS 120 40 LIMITS VDS 25 2.6 REV 1.0 1 2017/1/4 |
Similar Part No. - PD6B2BA |
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Similar Description - PD6B2BA |
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