PD6D2BA datasheet(2/8 Pages) UNIKC

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PD6D2BA

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

1.3

1.7

±100

431

3.9

5.4

1.2

3.1

1.3

9.6

2.4

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

3Package limitation current is 15A.

Forward Transconductance

VGS = 4.5V, ID = 12A

Zero Gate Voltage Drain Current

IGSS

Gate Threshold Voltage

VDS = VGS, ID = 250mA

VGS = 0V, VDS = 20V, f = 1MHz

Gate-Body Leakage

STATIC

PARAMETER

SYMBOL

Reverse Transfer Capacitance

Ciss

VDS = 5V, ID = 18A

TEST CONDITIONS

td(on)

td(off)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

VGS(th)

Reverse Recovery Time

IF = 18A, VGS = 0V

VSD

trr

IF = 18A, dlF/dt = 100A / mS

Qrr

Reverse Recovery Charge

Continuous Current

Drain-Source Breakdown Voltage

UNITS

V(BR)DSS

LIMITS

VGS = 0V, ID = 250mA

RDS(ON)

VGS = 10V , ID = 18A

VDS = 30V, VGS = 0V , TJ = 125 °C

gfs

DYNAMIC

mΩ

Input Capacitance

Qgd

Output Capacitance

Qg(VGS=10V)

Drain-Source On-State

Resistance

Gate-Drain Charge

Gate-Source Charge

VDS = 0V, VGS = ±20V

IDSS

Coss

Crss

VDS = 32V, VGS = 0V

VDS = 20V , ID = 18A

Qgs

VDS = 20V ,

ID @ 18A, VGS = 10V, RGEN =6Ω

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

Forward Voltage

Total Gate Charge

Qg(VGS=4.5V)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

REV 1.0

2016/12/23

PD6D2BA Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

PD6D2BA Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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