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2SC5890 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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2SC5890 Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 16 page ![]() 2SC5890 Silicon NPN Epitaxial UHF / VHF wide band amplifier ADE-208-1533 (Z) 1st. Edition Aug.2002 Features • High gain bandwidth product: f T = 7.8 GHz typ. • High power gain and low noise figure; PG = 12 dB typ., NF = 1.0 dB typ. at f = 900 MHz • High collector power dissipation: Pc = 700 mW when using alumina ceramic board (25 x 60 x 0.7 mm) • High withstanding to ESD of collector to emitter: Withstand up to 700 V (only real value) at C = 200 pF, Rs = 0 condition. Outline 1 2 3 1. Emitter 2. Base 3. Collector MPAK Note: Marking is “FS-”. |
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