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YFW10N60B3-R Datasheet(PDF) 3 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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YFW10N60B3-R Datasheet(HTML) 3 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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3 / 6 page ![]() N-CHANNEL MOSFET 10N60B 3 / 6 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. 源-漏二极管特性参数:(除非特殊说明,TC=25°C) 参数名称 测试条件 符号 最小值 典型值 最大值 单位 源极电流 MOS管中源极、漏极构成的 反偏P-N结 IS - - 10 A 源极脉冲电流(注2) ISM - - 40 A 源-漏二极管压降 ISD = 10 A, VSD - - 1.4 V 反向恢复时间(注2) ISD = 10 A, VGS = 0 V, dIF / dt = 100 A/μs, trr - 500 - nS 反向恢复电荷(注2) Qrr - 3 - uC (注:) 1. 脉冲测试:脉冲宽度≦300uS,占空比≦2%; 2. 基本上不受工作温度的影响。 |
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