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AOT412 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # AOT412
Description  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

AOT412 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
AOT412
·
FEATURES
·
Drain Current –ID= 60A@ TC=25℃
·
Drain Source Voltage-
: VDSS= 100V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 15.8mΩ(Max)
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
DESCRITION
·
Be suitable for synchronous rectification for server and
general purpose applications
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±
25
V
ID
Drain Current-Continuous
60
A
IDM
Drain Current-Single Pulsed
140
A
PD
Total Dissipation @TC=25℃
150
W
Tj
Max. Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature
-55~175
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
1
℃
/W


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