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PIP3211-R Datasheet(PDF) 10 Page - NXP Semiconductors |
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PIP3211-R Datasheet(HTML) 10 Page - NXP Semiconductors |
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10 / 13 page ![]() Philips Semiconductors Product Specification TOPFET high side switch PIP3211-R Fig.22. Typical battery to load clamping voltage. V BL = f(Tj); parameter IL; condition IG = 10mA Fig.23. Typical negative load clamping. I L = f(VLG); conditions VIG = = 0V, Tj = 25˚C Fig.24. Typical negative load clamping voltage. V LG = f(Tj); parameter IL; condition VIG = = 0V Fig.25. Typical reverse diode characteristic. I L = f(VBL); conditions VIG = 0 V, Tj = 25 ˚C Fig.26. Typical overload characteristic, T mb = 25 ˚C. I L = f(VBL); condition VBG = 16 V; parameter tp Fig.27. Short circuit load threshold voltage. V BL(TO) = f(VBG); conditions -40˚C ≤ T mb ≤ 150˚C 50 55 60 65 -50 0 50 100 150 200 Tj / OC IL = 1 mA 600 mA VBL / V IL / A -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 VBL / V IL / A 0 5 10 -30 -25 -20 -15 -10 VLG / V IL / A 0 5 10 15 20 25 30 35 40 45 50 02468 10 12 14 16 18 20 VBL / V Short circuit trip = 150us VBL(TO) typ. current limiting -30 -25 -20 -15 -10 -50 0 50 100 150 200 Tj / OC IL = 10 mA 10 A VLG / V 0 5 10 15 20 25 30 35 0 1020 304050 VBG/ V VBL(TO) / V min. max. typ. 25˚C September 2001 10 Rev 1.000 |
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