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AFGY100T65SPD Datasheet(PDF) 2 Page - ON Semiconductor

Part # AFGY100T65SPD
Description  Field Stop Trench IGBT with Soft Fast Recovery Diode 100A, 650V
PDF  9 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

AFGY100T65SPD Datasheet(HTML) 2 Page - ON Semiconductor

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AFGY100T65SPD
www.onsemi.com
2
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
RqJC
0.23
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
0.40
Thermal resistance junction−to−ambient
RqJA
40
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V,
IC = 1 mA
BVCES
650
−
−
V
Temperature Coefficient of
Breakdown Voltage
VGE = 0 V,
IC = 1 mA
DBVCES
DTJ
−
0.6
−
V/°C
Collector−emitter cut−off current,
gate−emitter short−circuited
VGE = 0 V,
VCE = 650 V
ICES
−
−
40
mA
Gate leakage current, collector−
emitter short−circuited
VGE = 20 V,
VCE = 0 V
IGES
−
−
±250
nA
ON CHARACTERISTICS
Gate−emitter threshold voltage
VGE = VCE, IC = 100 mA
VGE(th)
4.3
5.3
6.3
V
Collector−emitter saturation voltage
VGE = 15 V, IC = 100 A
VGE = 15 V, IC = 100 A, TJ = 175°C
VCE(sat)
−
−
1.6
2.15
2.05
−
V
DYNAMIC CHARACTERISTICS
Input capacitance
VCE = 30 V,
VGE = 0 V,
f = 1 MHz
Cies
−
4220
−
pF
Output capacitance
Coes
−
302
−
Reverse transfer capacitance
Cres
−
38
−
Internal Gate Resistance
f = 1 MHz
RG
−
3
−
W
Gate charge total
VCE = 400 V,
IC = 100 A,
VGE = 15 V
Qg
−
109
164
nC
Gate−to−emitter charge
Qge
−
34
−
Gate−to−collector charge
Qgc
−
36
−
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on delay time
TJ = 25°C,
VCC = 400 V,
IC = 100 A,
RG = 5.0 W,
VGE = 15 V,
Inductive Load
td(on)
−
36
−
ns
Rise time
tr
−
92
−
Turn−off delay time
td(off)
−
78
−
Fall time
tf
−
106
−
Turn−on switching loss
Eon
−
5.1
−
mJ
Turn−off switching loss
Eoff
−
2.7
−
Total switching loss
Ets
−
7.8
−
Turn−on delay time
TJ = 175°C,
VCC = 400 V,
IC = 100 A,
RG = 5.0 W,
VGE = 15 V,
Inductive Load
td(on)
−
32
−
ns
Rise time
tr
−
96
−
Turn−off delay time
td(off)
−
84
−
Fall time
tf
−
156
−
Turn−on switching loss
Eon
−
7.9
−
mJ
Turn−off switching loss
Eoff
−
4.0
−
Total switching loss
Ets
−
11.9
−



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