NP16N06YLL datasheet(2/9 Pages) RENESAS

Part #	NP16N06YLL

Description	60 V ??16 A ??N-channel Power MOS FET Application: Automotive

PDF	9 Pages

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Manufacturer	RENESAS [Renesas Technology Corp]

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NP16N06YLL

R07DS1124EJ0100 Rev.1.00

Page 2 of 7

Oct 30, 2013

Absolute Maximum Ratings (TA = 25°C)

Item

Symbol

Ratings

Unit

Drain to Source Voltage (VGS = 0 V)

VDSS

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

Drain Current (DC) (TC = 25

°C)

ID(DC)

±16

Drain Current (pulse) ∗

ID(pulse)

±32

Total Power Dissipation (TC = 25

°C)

PT1

27.3

Total Power Dissipation (TA = 25

°C) ∗

PT2

1.25

Channel Temperature

Tch

175

°C

Storage Temperature

Tstg

−55 to +175

°C

Single Avalanche Current ∗

IAS

Single Avalanche Energy ∗

EAS

Thermal Resistance

Channel to Case Thermal Resistance

Rth(ch-C)

5.49

°C/W

Channel to Ambient Thermal Resistance ∗

Rth(ch-A)

120.0

°C/W

Notes: *1. TC = 25°C, PW

≤ 10 μs, Duty Cycle ≤ 1%

*2. Mounted on glass epoxy substrate of 40 mm

× 40 mm × 1.6 mmt with 4% copper area (35 μm)

*3. Tch(start) = 25

°C, VDD = 30 V, RG = 25 Ω, L = 100 μH, VGS = 20 V → 0 V

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