STL36N60M6 datasheet(4/15 Pages) STMICROELECTRONICS

Part #	STL36N60M6

Description	N-channel 600 V, 91 mΩ typ., 25 A MDmesh™M6 Power MOSFET in a PowerFLAT™8x8 HV package

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 15 page

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current (pulsed)

100

VSD (2)

Forward on voltage

VGS = 0 V, ISD = 25 A

1.6

trr

Reverse recovery time

ISD = 30 A, di/dt = 100 A/µs, VDD = 60 V

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

340

Qrr

Reverse recovery charge

5.3

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 30 A, di/dt = 100 A/µs, VDD = 60 V,

Tj = 150 °C (see Figure 15. Test circuit

for inductive load switching and diode

recovery times)

430

Qrr

Reverse recovery charge

7.7

µC

IRRM

Reverse recovery current

1. Pulse width is limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

STL36N60M6

Electrical characteristics

DS11134 - Rev 4

page 4/15

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