STM32F334X4_V01 datasheet(77/125 Pages) STMICROELECTRONICS

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DS9994 Rev 9

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STM32F334x4 STM32F334x6 STM32F334x8

Electrical characteristics

103

All I/Os are CMOS and TTL compliant (no software configuration required). Their

characteristics cover more than the strict CMOS-technology or TTL parameters. The

coverage of these requirements is shown in Figure 20 and Figure 21 for standard I/Os.

Figure 20. TC and TTa I/O input characteristics - CMOS port

Vhys

Schmitt trigger

hysteresis

TT, TC and TTa I/O

200 (1)

FT and FTf I/O

100 (1)

BOOT0

300 (1)

Ilkg

Input leakage

current (3)

TC, FT, TT, FTf and TTa

I/O in digital mode

VSS ≤VIN ≤VDD

±0.1

µA

TTa I/O in digital mode

VDD ≤VIN ≤VDDA

TTa I/O in analog mode

VSS ≤VIN ≤VDDA

±0.2

FT and FTf I/O(4)

VDD ≤VIN ≤5 V

RPU

Weak pull-up

equivalent resistor(5)

VIN = VSS

RPD

Weak pull-down

equivalent resistor(5)

VIN = VDD

CIO

I/O pin capacitance

1. Data based on design simulation.

2. Tested in production.

3. Leakage could be higher than the maximum value. If negative current is injected on adjacent pins. Refer to Table 49: I/O

current injection susceptibility.

4. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled.

5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This

PMOS/NMOS contribution to the series resistance is minimum (~10% order).

Table 50. I/O static characteristics (continued)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

MS30255V2

VDD (V)

VIHmin 2.0

VILmax 0.7

VIL/VIH (V)

1.3

2.0

3.6

VILmax

= 0.3V

+0.07

0.6

2.7

3.0

3.3

CMOS standard requirements VILmax = 0.3VDD

VIHmin

= 0.445V

+0.398

Area not determined

Tested

in production

Tested

in production

Based

on design

simulations

Based

on design

simulations

CMOS

standard

requirements

VIHmin

= 0.7V

STM32F334X4 Datasheet(PDF) 77 Page - STMicroelectronics

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