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STM32F334C6U6TR Datasheet(PDF) 70 Page - STMicroelectronics |
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STM32F334C6U6TR Datasheet(HTML) 70 Page - STMicroelectronics |
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70 / 125 page ![]() Electrical characteristics STM32F334x4 STM32F334x6 STM32F334x8 70/125 DS9994 Rev 9 Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available at the ST website www.st.com. Figure 18. Typical application with a 32.768 kHz crystal Note: An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one. 6.3.8 Internal clock source characteristics The parameters given in Table 40 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 19. gm Oscillator transconductance LSEDRV[1:0]=00 lower-driving capability 5- - µA/V LSEDRV[1:0]=10 medium low-driving capability 8- - LSEDRV[1:0]=01 medium high-driving capability 15 - - LSEDRV[1:0]=11 higher-driving capability 25 - - tSU(LSE)(3) Startup time VDD is stabilized - 2 - s 1. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for ST microcontrollers”. 2. Guaranteed by design, not tested in production. 3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer. Table 39. LSE oscillator characteristics (fLSE = 32.768 kHz) (continued) Symbol Parameter Conditions(1) Min.(2) Typ. Max.(2) Unit MS19876V1 (1) OSC_IN OSC_OUT RF Bias controlled gain fHSE REXT 8 MHz resonator Resonator with integrated capacitors CL1 CL2 |
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