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STM32L552CCT3PTR Datasheet(PDF) 303 Page - STMicroelectronics |
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STM32L552CCT3PTR Datasheet(HTML) 303 Page - STMicroelectronics |
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303 / 340 page ![]() DS12737 Rev 6 303/340 STM32L552xx Electrical characteristics 307 Figure 70. OCTOSPI HyperBus read Figure 71. OCTOSPI HyperBus read with double latency Figure 72. OCTOSPI HyperBus write MSv47733V1 CS# tACC = Initial Access Latency Count Command-Address 47:40 39:32 31:24 23:16 15:8 7:0 Dn A Dn B Dn+1 A Dn+1 B Host drives DQ[7:0] and Memory drives RWDS CK, CK# RWDS DQ[7:0] Memory drives DQ[7:0] and RWDS tw(CS) tv(RWDS) tv(CK) tv(DS) tv(DQ) th(CK) th(DS) tv(OUT) th(OUT) th(DQ) ts(DQ) MSv49351V1 CS# t RWR =Read Write Recovery t ACC = Access Additional Latency Command-Address 47:40 39:32 31:24 23:16 15:8 7:0 High = 2x Latency Count Low = 1x Latency Count Dn A Dn B Dn+1 A Dn+1 B Host drives DQ[7:0] and Memory drives RWDS and RWDS RWDS and Data are edge aligned CK, CK# RWDS DQ[7:0] Memory drives DQ[7:0] tCKDS MSv47734V1 CS# Access Latency Latency Count Command-Address 47:40 39:32 31:24 23:16 15:8 7:0 Dn A Dn B Dn+1 A Dn+1 B Host drives DQ[7:0] and Memory drives RWDS Host drives DQ[7:0] and RWDS CK, CK# RWDS DQ[7:0] tw(CS) tv(RWDS) tv(CK) th(CK) High = 2x Latency Count Low = 1x Latency Count Read Write Recovery th(OUT) tv(OUT) th(OUT) tv(OUT) th(OUT) tv(OUT) |
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