NPN SILICON RF TRANSISTOR

Description

Ultra high frequency low noise transistor, planar NPN silicon Epitaxial bipolar process.

noise figure, large dynamic range and ideal current characteristics, the use of SOT

mainly used in the VHF, UHF and CATV high frequency wideband low

PACKAGE:

SOT-323

Feature

@ V

Low noise: NF

TYP. Value is 1.8dB

TYP. Value is 9GHz

PARAMETER

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector current

Collector Power Dissipation

Junction Temperature

Storage Temperature

hFE Classification

Classification

A

Marking

hFE

60~100

Ultra high frequency low noise transistor, planar NPN silicon Epitaxial bipolar process.

range and ideal current characteristics, the use of SOT-323 ultra compact chip package,

mainly used in the VHF, UHF and CATV high frequency wideband low-noise amplifier

1

：（Base） 2：（Emitter） 3：（Collector

TYP. Value is 13dB

TYP. Value is 1.8dB

TYP. Value is 9GHz

℃ Unless Otherwise noted

SYMBLE

MAXIMUM VALUE

UNIT

20

10

2

70

mA

150

mW

150

B

C

D

N2

90~140

130~180

170~250

250~300

Ultra high frequency low noise transistor, planar NPN silicon Epitaxial bipolar process. With high power gain, low

323 ultra compact chip package,

Collector

）

UNIT

V

V

V

mA

mW

℃

℃

E

250~300

BFS520

1 of 3

REV.08