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FTK3902DFN56 Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK3902DFN56
Description  30V N-Channel MOSFETs
PDF  5 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK3902DFN56 Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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30V N-Channel MOSFETs
Static State Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
---
---
V
IDSS
Drain-Source Leakage Current
VDS=27V , VGS=0V , TJ=25
℃
---
---
1
uA
VDS=24V , VGS=0V , TJ=85
℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=
±20V , VDS=0V
---
---
±100
nA
RDS(ON)
Static Drain-Source On-Resistance3
VGS=10V , ID=30A
---
1.2
1.6
mΩ
VGS=4.5V , ID=15A
---
1.8
2.4
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1
1.6
2.5
V
gfs
Forward Transconductance
VDS=10V , ID=15A
---
30
---
S
Qg
Total Gate Charge3 , 4
VDS=15V , VGS=4.5V , ID=10A
---
65
120
nC
Qgs
Gate-Source Charge3 , 4
---
16
30
Qgd
Gate-Drain Charge3 , 4
---
21
40
Td(on)
Turn-On Delay Time3 , 4
VDD=15V , VGS=10V , RG=3.3Ω
ID=1A
---
28
56
ns
Tr
Rise Time3 , 4
---
45
90
Td(off)
Turn-Off Delay Time3 , 4
---
105
200
Tf
Fall Time3 , 4
---
40
80
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
7720
11000
pF
Coss
Output Capacitance
---
945
1400
Crss
Reverse Transfer Capacitance
---
435
650
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
1.2
2.4
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
VDD=25V, L=0.1mH, IAS=30A
45
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
130
A
ISM
Pulsed Source Current3
---
---
260
A
VSD
Diode Forward Voltage3
VGS=0V , IS=1A , TJ=25
℃
---
---
1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=70A.,RG=25Ω
,Starting TJ=25℃.
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Drain-Source Diode Characteristics
Dynamic Characteristics
Guaranteed Avalanche Energy
FTK3902DFN56
2018. 03. 12
2/5
Revision No : 0



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