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2N7008 Datasheet(PDF) 1 Page - Microchip Technology |
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2N7008 Datasheet(HTML) 1 Page - Microchip Technology |
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1 / 12 page  2021 Microchip Technology Inc. DS20005800A-page 1 2N7008 Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-Drain Diode • High Input Impedance and High Gain Applications • Motor Controls • Converters • Amplifiers • Switches • Power Supply Circuits • Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) General Description The 2N7008 is a low-threshold Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. Package Type See Table 2-1 for pin information. 3-lead TO-92 (Top view) GATE SOURCE DRAIN N-Channel Enhancement-Mode Vertical DMOS FET |
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Similar Description - 2N7008 |
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