NTPF360N80S3Z

www.onsemi.com

2

Symbol

Parameter

Value

Unit

Drain−to−Source Voltage

800

V

Gate−to−Source Voltage

DC

±20

V

AC (f > 1 Hz)

±30

Drain Current

13*

A

8.2*

Drain Current

Pulsed (Note 1)

32.5*

A

Single Pulsed Avalanche Energy (Note 2)

40

mJ

Avalanche Current (Note 2)

2.0

A

Repetitive Avalanche Energy (Note 1)

0.31

mJ

dv/dt

MOSFET dv/dt

100

V/ns

Peak Diode Recovery dv/dt (Note 3)

10

Power Dissipation

31

W

Derate Above 25°C

0.168

W/°C

Operating and Storage Temperature Range

−55 to +150

°C

Lead Temperature Soldering Reflow for Soldering Purposes

(1/8″ from Case for 10 seconds)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

*Drain current limited by maximum junction temperature

1. Repetitive rating: pulse−width limited by maximum junction temperature.

THERMAL RESISTANCE RATINGS

Symbol

Parameter

Value

Unit

Junction−to−Case − Steady State

4.04

_C/W

Junction−to−Ambient − Steady State

62.5

PACKAGE MARKING AND ORDERING INFORMATION

Part Number

Top Marking

Package

Packing Method

Reel Size

Tape Width

Quantity

NTPF360N80S3Z

NTPF360N80S3Z

TO−220F

Tube

N/A

N/A

50 Units