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GUVC-S10GD Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH |
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GUVC-S10GD Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH |
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1 / 2 page ![]() www.roithner-laser.com 1 GUVC-S10GD UV Schottky-type Photodiode Aluminium Gallium Nitride Based Material UVC, 220 – 280 nm Photovoltaic Operation Mode SMD 3535, 3.5 x 3.5 x 1 mm Description GUVC-S10GD is a UVC Photodiode working in the spectral range of 220 – 280 nm. It contains The Aluminium Gallium Nitride based chip die, housed into SMD 3535 package, is a great solution, as example for pure UVC monitoring or sterilization lamp monitoring. Absolute Maximum Ratings Parameter Symbol Values Unit Reverse Voltage VR 3 V Forward Current IOP 1 mA Optical Source Power Range POPT 0.1 µ – 100 m W/cm2 Operating Temperature TCASE -30 – +85 °C Storage Temperature TSTG -40 – +90 °C Soldering Temperature * TSLD 260 °C * must be completed within 10 seconds Electro-Optical Characteristics TCASE = 25°C Parameter Symbol Values Unit Dark Current (VR=0.1V) ID max. 1 nA Photo Current (UVC Lamp, 1mW/cm2) IPH 70 – 85 nA Temperatur Coefficient ITC typ. -0.07 %/°C Responsivity ( λ=254nm, VR=0V) R typ. 0.07 A/W Spectral Detection Range λ 220 – 280 nm Active Area A 0.076 mm2 Rev. 12/2020 |
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