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MMBZ16VTALT1G Datasheet(PDF) 3 Page - ON Semiconductor |
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MMBZ16VTALT1G Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 8 page  MMBZxxxALT1G Series, SZMMBZxxxALT1G Series www.onsemi.com 3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current QVBR Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK Uni−Directional Zener IPP IF V I IR IT VRWM VC VBR VF ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance) 24 WATTS Device* Device Marking VRWM IR @ VRWM Breakdown Voltage Max Zener Impedance (Note 5) VC @ IPP (Note 6) QVBR VBR (Note 4) (V) @ IT ZZT @ IZT ZZK @ IZK VC IPP Volts mA Min Nom Max mA W W mA V A mV/ 5C MMBZ5V6ALT1G/T3G 5A6 3.0 5.0 5.32 5.6 5.88 20 11 1600 0.25 8.0 3.0 1.26 MMBZ6V2ALT1G 6A2 3.0 0.5 5.89 6.2 6.51 1.0 − − − 8.7 2.76 2.80 MMBZ6V8ALT1G 6A8 4.5 0.5 6.46 6.8 7.14 1.0 − − − 9.6 2.5 3.4 MMBZ9V1ALT1G 9A1 6.0 0.3 8.65 9.1 9.56 1.0 − − − 14 1.7 7.5 (VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance) 40 WATTS Device* Device Marking VRWM IR @ VRWM Breakdown Voltage VC @ IPP (Note 6) QVBR VBR (Note 4) (V) @ IT VC IPP Volts nA Min Nom Max mA V A mV/ 5C MMBZ12VALT1G 12A 8.5 200 11.40 12 12.60 1.0 17 2.35 7.5 MMBZ15VALT1G 15A 12 50 14.25 15 15.75 1.0 21 1.9 12.3 MMBZ16VALT1G 16A 13 50 15.20 16 16.80 1.0 23 1.7 13.8 MMBZ18VALT1G 18A 14.5 50 17.10 18 18.90 1.0 25 1.6 15.3 MMBZ20VALT1G 20A 17 50 19.00 20 21.00 1.0 28 1.4 17.2 MMBZ27VALT1G/T3G 27A 22 50 25.65 27 28.35 1.0 40 1.0 24.3 MMBZ33VALT1G 33A 26 50 31.35 33 34.65 1.0 46 0.87 30.4 MMBZ47VALT1G 47A 38 50 44.65 47 49.35 1.0 54 0.74 43.1 (VF = 0.9 V Max @ IF = 10 mA) (2% Tolerance) 40 WATTS Device* Device Marking VRWM IR @ VRWM Breakdown Voltage VC @ IPP (Note 6) QVBR VBR (Note 4) (V) @ IT VC IPP Volts nA Min Nom Max mA V A mV/ 5C MMBZ16VTALT1G 16T 13 50 15.68 16 16.32 1.0 23 1.7 13.8 MMBZ47VTALT1G 47T 38 50 46.06 47 47.94 1.0 54 0.74 43.1 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. VBR measured at pulse test current IT at an ambient temperature of 25°C. 5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1.0 kHz. 6. Surge current waveform per Figure 6 and derate per Figure 7 * Include SZ-prefix devices where applicable. |
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