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LM2N60CP Datasheet(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Part # LM2N60CP
Description  N-Channel Enhancement Mode Power MOSFET
PDF  7 Pages
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Manufacturer  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM2N60CP Datasheet(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

  LM2N60CP Datasheet HTML 1Page - Shanghai Leiditech Electronic Technology Co., Ltd LM2N60CP Datasheet HTML 2Page - Shanghai Leiditech Electronic Technology Co., Ltd LM2N60CP Datasheet HTML 3Page - Shanghai Leiditech Electronic Technology Co., Ltd LM2N60CP Datasheet HTML 4Page - Shanghai Leiditech Electronic Technology Co., Ltd LM2N60CP Datasheet HTML 5Page - Shanghai Leiditech Electronic Technology Co., Ltd LM2N60CP Datasheet HTML 6Page - Shanghai Leiditech Electronic Technology Co., Ltd LM2N60CP Datasheet HTML 7Page - Shanghai Leiditech Electronic Technology Co., Ltd  
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■ Maximum Ratings (Ta=25℃ Unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
600
V
Continues Drain Current
ID
Tc=25℃
2*
A
Tc=100℃
1.3*
Plused Drain Current (note 1)
IDM
8
A
Gate-to-Source Voltage
VGS
±30
V
Single Pulsed Avalanche Energy (note 2)
EAS
120
mJ
Avalanche Current (note 1)
IAR
2.0
A
Repetitive Avalanche Energy (note 1)
EAR
10
mJ
Peak Diode Recovery (note 3)
dv/dt
4.5
V/ns
Power Dissipation
PD
Tc=25℃
TO-220AB
54
W
ITO-220AB
23
TO-251/TO-252
44
Power Dissipation Derating Factor
PD(DF)
Above 25℃
TO-220AB
0.8
W/℃
ITO-220AB
0.26
TO-251/TO-252
0.39
Operating and Storage Temperature Range
TJ，TSTG
150，-55～+150
℃
Maximum Temperature for Soldering
TL
300
℃
■Electrical Characteristics（Ta=25℃ Unless otherwise specified）
Off-Characteristics
Parameter
Symbol
Tests Conditions
Min
Type
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
ID=250μA, VGS=0V
600
-
-
V
Breakdown Voltage Temperature Coefficient
△
BVDSS △
/TJ
ID=250μA, referenced to 25℃
-
0.7
-
V/℃
Zero Gate Voltage Drain Current
IDSS
VDS=600V,VGS=0V, TC=25℃
-
-
1
μA
VDS=480V, TC=125℃
-
-
10
Gate-body leakage current, forward
IGSSF
VDS=0V, VGS =30V
-
-
100
nA
Gate-body leakage current, reverse
IGSSR
VDS=0V, VGS = -30V
-
-
-100
nA
LM2N60CP
Rev :
www.leiditech.com
01.06.2018
2/7



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