IXYS reserves the right to change limits, test conditions, and dimensions.

IXTP 1R6N50P

IXTY 1R6N50P

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

Fig. 11. Capacitance

1

10

100

1000

0

5

10

15

20

25

30

35

40

Ciss

Coss

Crss

f = 1MHz

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

00.511.5

22.5

33.5

4

Fig. 7. Input Adm ittance

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

4

4.5

55.5

66.5

25

-40

Fig. 8. Transconductance

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

0

0.3

0.6

0.9

1.2

1.5

1.8

2.1

2.4

25

125

Fig. 9. Source Current vs.

Source-To-Drain Voltage

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.5

0.6

0.7

0.8

0.9

Fig. 12. Forw ard-Bias

Safe Operating Area

0.1

1

10

10

100

1000

100µs

1ms

DC

10ms

25µs