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FTK4906 Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK4906
Description  40V N-Channel MOSFETs
PDF  5 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK4906 Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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40V N-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
40
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.03
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=40V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=32V , VGS=0V , TJ=85℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V , ID=8A
---
7
9
m
Ω
VGS=4.5V , ID=4A
---
9.5
13
m
Ω
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.8
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5
---
mV/℃
gfs
Forward Transconductance
VDS=10V , ID=10A
---
13
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge2 , 3
VDS=20V , VGS=4.5V , ID=8A
---
12.2
24
nC
Qgs
Gate-Source Charge2 , 3
---
3.3
7
Qgd
Gate-Drain Charge2 , 3
---
6.7
13
Td(on)
Turn-On Delay Time2 , 3
VDD=15V, VGS=10V , RG=3.3Ω
ID=1A
---
13.2
25
ns
Tr
Rise Time2 , 3
---
2.2
5
Td(off)
Turn-Off Delay Time2 , 3
---
72
130
Tf
Fall Time2 , 3
---
4.5
10
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
1220
2200
pF
Coss
Output Capacitance
---
130
250
Crss
Reverse Transfer Capacitance
---
55
110
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
2.2
---
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
15
A
ISM
Pulsed Source Current
---
---
30
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
trr
Reverse Recovery Time3
VGS=0V,IS=1A , dI/dt=100A/µs
TJ=25℃
---
17
---
ns
Qrr
Reverse Recovery Charge3
---
2.8
---
nC
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25 , unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
FTK4906
2018. 03. 16
2/5
Revision No : 0



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