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2N6560 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2N6560
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6560 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  2N6560 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N6560 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website： www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2N6560
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: VCEO=450V(Min)
·
Minimum Lot-to-Lot variations for robust device
Performance and reliable operation
APPLICATIONS
·
Power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNI
T
VCBO
Collector-Base Voltage
450
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
PD
Collector Power Dissipation
@ TC=25℃
220
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-65~200
℃


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