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FTK8902P Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK8902P
Description  80V N-Channel MOSFETs
PDF  5 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK8902P Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  FTK8902P Datasheet HTML 1Page - First Silicon Co., Ltd FTK8902P Datasheet HTML 2Page - First Silicon Co., Ltd FTK8902P Datasheet HTML 3Page - First Silicon Co., Ltd FTK8902P Datasheet HTML 4Page - First Silicon Co., Ltd FTK8902P Datasheet HTML 5Page - First Silicon Co., Ltd  
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80V N-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
80
---
---
V
IDSS
Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=64V , VGS=0V , TJ=125℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=± 25V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V , ID=15A
---
7.2
8.5
mΩ
VGS=4.5V , ID=8A
---
9
11
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1
2
3
V
gfs
Forward Transconductance
VDS=10V , ID=3A
---
18
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3,4
VDS=40V , VGS=10V , ID=10A
---
86
170
nC
Qgs
Gate-Source Charge3,4
---
14.5
28
Qgd
Gate-Drain Charge3,4
---
17.5
35
Td(on)
Turn-On Delay Time3,4
VDD=40V , VGS=10V , RG=10Ω
ID=10A
---
21.8
42
ns
Tr
Rise Time3,4
---
27.8
54
Td(off)
Turn-Off Delay Time3,4
---
111
220
Tf
Fall Time3,4
---
56
112
Ciss
Input Capacitance
VDS=30V , VGS=0V , F=1MHz
---
5335
10000
pF
Coss
Output Capacitance
---
350
700
Crss
Reverse Transfer Capacitance
---
185
370
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
1.6
3.2
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
120
A
ISM
Pulsed Source Current
---
---
240
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
trr
Reverse Recovery Time
VGS=0V,IS=20A , di/dt=100A/µs
TJ=25℃
---
28
---
ns
Qrr
Reverse Recovery Charge
---
20
---
nC
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=50V,VGS=10V,L=0.1mH,IAS=68A., Starting TJ=25℃
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
2019. 04. 10
2/5
Revision No : 0
FTK8902P



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