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LCE65T900F Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LCE65T900F Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 9 page  NCE65T900D，NCE65T900, NCE65T900F General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） VDS 650 V RDS(ON)TYP 750 mΩ ID 5 A Package Marking And Ordering Information Device Device Package Marking LCE65T900D TO-263 NCE65T900D LCE65T900 TO-220 NCE65T900 LCE65T900F TO-220F NCE65T900F Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol NCE65T900 NCE65T900D NCE65T900F Unit Drain-Source Voltage ( VGS=0V） VDS 650 V Gate-Source Voltage ( VDS=0V) AC (f>1 Hz) VGS ±30 V Continuous Drain Current at Tc=25°C ID (DC) 5 5* A Continuous Drain Current at Tc=100°C ID (DC) 3 3* A Pulsed drain current (Note 1) IDM (pluse) 20 20* A Maximum Power Dissipation(Tc=25℃) Derate above 25 °C PD 46 0.37 29 0.23 W W/ °C Single pulse avalanche energy (Note2) EAS 52 mJ Avalanche current (Note 1) IAR 0.9 A Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) EAR 0.14 mJ Schematic diagram TO-263 TO-220 TO-220F LCE N-Channel Super Junction Power MOSFET Rev : www.leiditech.com 01.06.2018 1/9 |
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