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LM0804 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LM0804 Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 6 page  General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features VDS 80V ID (at VGS=10V) 1 40A RDS(ON) (at VGS=10V) 3.7mΩ(Typ) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS +20/-12 V Drain Current-Continuous TC=25°C I D 1 40 A TC=100°C I D 89 A Maximum Power Dissipation P D 150 W Single pulse avalanche energy(1) EAS 540 mJ Junction and Storage Temperature Range T J,TSTG -55 To 150 ℃ Thermal Characteristics Parameter Symbol Typ Max Unit Thermal Resistance junction-case R θJc 1.1 ℃ /W Thermal Resistance unction-to-Ambient R θJA 62 ℃ /W D G S G DS TO220 TO263 G D S LM0804 Super Trench Power MOSFET N-Channel Rev : www.leiditech.com 01.06.2018 1/6 |
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Similar Description - LM0804 |
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