LM3019 datasheet(2/3 Pages) LEIDITECH

Part #	LM3019

Description	N-Channel Enhancement Mode Power MOSFET

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Direct Link	http://www.leiditech.com

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2 / 3 page

MOSFET ELECTRICAL CHARACTERISTICS

Ta=25

℃ unless otherwise specified

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0 V, ID=250 µA

Gate-Threshold Voltage

Vth(GS)

VDS=VGS, ID=250 µA

Gate-body Leakage

lGSS

VDS=0 V, VGS=±20 V

Zero Gate Voltage Drain Current

IDSS

VDS=60 V, VGS=0 V

On-state Drain Current

ID(ON)

VGS=10 V, VDS=7 V

Drain-Source On-Resistance

RDS(on)

VGS=10 V, ID=500mA

Ω

VGS=5 V, ID=50mA

Forward Trans conductance

gfs

VDS=10 V, ID=200mA

Drain-source on-voltage

VDS(on)

VGS=10V, ID=500mA

3.75

VGS=5V, ID=50mA

0.375

Diode Forward Voltage

VSD

IS=115mA, VGS=0 V

0.55

1.2

Input Capacitance

Ciss

VDS=25V, VGS=0V, f=1MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

SWITCHING TIME

Turn-on Time

td(on)

VDD=25 V, RL=50Ω

ID=500mA,VGEN=10 V

RG=25 Ω

Turn-off Time

td(off)

200

±10

±30

µA

1.5

1.0

0.7

Rev 2.0 :

www.leiditech.com

12.01.2019

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LM3019

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