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LSD10E100TSL Datasheet(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LSD10E100TSL Datasheet(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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2 / 4 page ![]() ABSOLUTE MAXIMUM RATING (Tamb=25 °C, unless otherwise specified) Symbol Parameter Value Units VRRM Repetitive Peak Reverse Voltage 100 V IF(AV) Average Forward Current 10 A IFSM Peak Forward Surge Current, 8.3ms single half sine-wave 200 A TJ & TSTG Junction and Storage Temperature -50~+150 °C ELECTRICAL CHARACTERISTICS (Tamb=25 °C, unless otherwise specified) Symbol Parameter Test Condition Min Typ Max Units IF = 3A Ta=25°C 0.43 V IF = 5A Ta=25°C 0.51 V IF = 10A Ta=25°C 0.59 0.64 V IF = 15A Ta=25°C 0.67 0.74 V IF = 3A Ta=125°C 0.36 V IF = 5A Ta=125°C 0.44 V IF = 10A Ta=125°C 0.57 0.62 V VF Forward Voltage IF = 15A Ta=125°C 0.62 0.68 V VR Reverse Breakdown Voltage IR = 0.5mA 100 110 V IR Reverse Leakage Current VR = 100V 20 80 μA CJ Junction Capacitance f=1MHz, VR=4V 1000 pF Rth(JA) Thermal Resistance Junction to Ambient (note 1) 98 °C/W Rth(JL) Thermal Resistance Junction to Lead (note 1) 19 °C/W Note 1: Units mounted on recommended P.C.B. 1 oz. pad layout LSD10E100TSL Rev : www.leiditech.com 01.06.2015 2/4 |
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