LBAV99WT1G datasheet(2/4 Pages) LEIDITECH

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

200

FR–5 Board, (Note 1.) TA = 25°C

Derate above 25°C

1.6

mW/°C

Thermal Resistance Junction to Ambient

RθJA

625

°C/W

Total Device Dissipation

300

Alumina Substrate, (Note 2.) TA = 25°C

Derate above 25°C

2.4

mW/°C

Thermal Resistance Junction to Ambient

RθJA

417

°C/W

Junction and Storage Temperature

TJ,Tstg

–65 to +150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(I(BR) = 100

µA)

V(BR)

––

Vdc

Reverse Voltage Leakage Current

(VR = 70 Vdc)

––

2.5

µAdc

(VR = 25 Vdc, TJ = 150°C)

––

(VR = 70 Vdc, TJ = 150°C)

––

Diode Capacitance

––

1.5

(VR = 0, f = 1.0 MHz)

Forward Voltage

(IF = 1.0 mAdc)

––

715

mVdc

(IF = 10 mAdc)

––

855

(IF = 50 mAdc)

––

1000

(IF = 150 mAdc)

––

1250

Reverse Recovery Time

RL = 100

Ω

trr

––

6.0

(IF=IR=10 mAdc, iR(REC)=1.0mAdc) (Figure 1)

Forward Recovery Voltage (IF = 10 mA, t r = 20 ns)

VFR

––

1.75

1. FR–5 = 1.0

× 0.75 × 0.062 in.

2. Alumina = 0.4

× 0.3 × 0.024 in. 99.5% alumina.

Notes: 1. A 2.0 k

Ω variable resistor adjusted for a Forward Current (I

F ) of 10mA.

Notes: 2. Input pulse is adjusted so I

R(peak) is equal to 10mA.

Notes: 3. t

p » t rr

Figure 1. Recovery Time Equivalent Test Circuit

+10 V

2.0 k

820

Ω

100

µH

0.1

µF

D.U.T.

0.1

µF

Ω OUTPUT

PULSE

GENERATOR

Ω INPUT

SAMPLING

OSCILLOSCOPE

10%

90%

R(REC) = 1.0 mA

OUTPUT PULSE

F = I R = 10 mA; MEASURED

at i

R(REC) = 1.0 mA)

INPUT SIGNAL

LBAV99WT1G

S-LBAV99WT1G

LBAV99RWT1G

S-LBAV99RWT1G

Rev : 01.06.2014

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