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FTK5N80P Datasheet(PDF) 3 Page - First Silicon Co., Ltd |
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FTK5N80P Datasheet(HTML) 3 Page - First Silicon Co., Ltd |
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3 / 8 page ![]() 2013. 01. 03 3/8 FTK5N80P/F/DD Revision No : 0 ELECTRICAL CHARACTERISTICS (TC = 25˚C , unless Otherwise specified.) VSD VGS = 0 V, IS =5.0A 1.4 V IS 5.5 A ISM 20 A tRR 700 ns QRR VGS = 0 V, IS = 5.0A, dIF/dt =100 A/µs (Note 4) 7.7 µC PARAMETER SYMBOL TEST CONDITIONS MIN TYP UNIT DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Reverse Recovery Time Reverse Recovery Charge MAX Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area. 3. Starting TJ=25°C, ID=IAR, VDD=50V 4. Pulsed: Pulse duration=300μs, duty cycle 1.5%. 5. Essentially independent of operating temperature |
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