S1AF ~ S1MF

SEMICONDUCTOR

TECHNICAL DATA

2015. 09. 06

1/2

Revision No : 0

Reverse Voltage - 50 to 1000 V , Forward Current - 1 A

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specied.

Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.

Maximum DC Blocking Voltage

Peak Forward Surge Current 8.3 ms Single Half

Sine Wave Superimposed on Rated Load

(JEDEC Method)

Maximum Instantaneous Forward Voltage at 1 A

m

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

Operating and Storage Temperature Range

Maximum Average Forward Rectified Current

at Ta = 65

°C

Maximum DC Reverse Current

Ta = 25

°C

at Rated DC Blocking Voltage

Ta =125

°C

1）

Typical Junction Capacitance

2）

50

100

200

400

600

800

1000

V

35

70

140

280

420

560

700

V

50

100

200

400

600

800

1000

V

1

30

1.1

5

50

4

180

-55 ~ +150

A

A

V

μA

pF

°C

F

S1BF

F

S1KF

Typical Thermal Resistance

1

2

°C/W

T , T

j

stg

y

U

FEATURES

For surface mounted applications

MECHANICAL DATA

Case: SMAF

Terminals: Solderable per MIL-STD-750, Method 2026

Approx. Weight: 27mg 0.00086oz

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Low prole package

Glass Passivated Chip Juntion

Easy to pick and place

Lead free in comply with EU RoHS 2011/65/EU directives

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