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LBAS16LT3G Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LBAS16LT3G Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 3 page  Switching Diode MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage V R 75 Vdc Peak Forward Current I F 200 mAdc Peak Forward Surge Current I FM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board, (1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RθJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate, (2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient RθJA 417 °C/W Junction and Storage Temperature TJ ,Tstg –55 to +150 °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current I R µAdc (V R = 75Vdc) — 1.0 (V R = 75 Vdc, T J = 150°C) — 50 (V R = 25 Vdc, T J = 150°C) — 30 Reverse Breakdown Voltage V (BR) 75 — Vdc (I BR = 100 µAdc) Forward Voltage V F mV (I F = 1.0 mAdc) — 715 (I F = 10 mAdc) — 855 (I F = 50 mAdc) — 1000 (I F = 150 mAdc) — 1250 Diode Capacitance C D — 2.0 pF (V R = 0, f = 1.0 MHz) Forward Recovery Voltage V FR –- 1.75 Vdc (I F = 10 mAdc, t r = 20ns ) Reverse Recovery Time t rr — 6.0 ns (I F = I R = 10 mAdc, R L = 50 Ω) Stored Charge Q S —45 pC (I F = 10 mAdc to V R= 5.0Vdc, R L = 500 Ω) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. LBAS16LT1G 3 CATHODE 1 ANODE DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS16LT1G A6 3000/Tape&Reel LBAS16LT3G A6 10000/Tape&Reel We declare that the material of product compliance with RoHS requirements. 1 3 2 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBAS16LT1G S-LBAS16LT1G S-LBAS16LT3G Dimensions SOT-23 Pin Configuration Rev : www.leiditech.com 01.06.2015 1/3 |
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