Features

●

Metal silicon junction, majority carrier conduction

●

Guardring for overvoltage protection

●

Low power loss, high efficiency

●

High current capability, low forward voltage drop

●

High surge capability

●

Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

●

For use in low voltage, high frequency inverters, free wheeling,

and polarity protection application

Mechanical Data

●

Case: SMAF molded plastic body

●

Terminals: Plated axial leads, solderable per MIL-STD-750, method 2026

●

Polarity: Color band denotes cathode end

●

Mounting Position: Any

●

Weight: 0.0027 grams (approximate)

Maximum Ratings and Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

PARAMETER

SYMBOL

SS560L

UNITS

Maximum repetitive peak reverse voltage

60

V

Maximum RMS voltage

42

V

Maximum DC blocking voltage

60

V

Average Rectified Output Current

0.375″ (9.5mm) lead length

5.0

A

Peak forward surge current, 8.3 mS single half sine-wave

superimposed on rated load

80

A

0.52

V

Maximum DC reverse current

at rated DC blocking voltage

0.5

mA

Typical thermal resistance (Note 1)

55

℃/W

Operating junction temperature range

-55 to +150

℃

Storage temperature range

-55 to +150

℃

Notes:

1. Thermal Resistance from Junction to Ambient 0.375”(9.5mm) lead length.

5A SCHOTTKY BARRIER RECTIFIER

Reverse Voltage 60 Volts Forward Current 5.0 Amperes

SEMICONDUCTOR

TECHNICAL DATA

SS560L

2019. 10. 24

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Revision No : 0