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FTK4960DFN56 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTK4960DFN56 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 5 page  Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ± 20 V ID Drain Current – Continuous (TC=25℃) 100 A Drain Current – Continuous (TC=100℃) 63 A IDM Drain Current – Pulsed 1 400 A EAS Single Pulse Avalanche Energy 2 312 mJ IAS Single Pulse Avalanche Current 2 79 A PD Power Dissipation (TC=25℃) 135 W Power Dissipation – Derate above 25℃ 1.08 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃/W RθJC Thermal Resistance Junction to Case --- 0.92 ℃/W BVDSS RDSON ID 40V 2.8m Ω 100A These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. 40V, 100A, RDS(ON) =2.8m Ω@VGS = 10V Improved dv/dt capability Fast switching Green Device Available General Description Features Applications MB / VGA / Vcore POL Applications SMPS 2 nd SR Absolute Maximum Ratings (Tc=25℃unless otherwise noted) Thermal Characteristics PPAK5x6 Pin Configuration D S D G S G S S D D D 40V N-Channel MOSFETs SEMICONDUCTOR TECHNICAL DATA FTK4960DFN56 2019. 09. 18 1/5 Revision No : 0 |
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