UTT4407G-S08-R datasheet(4/9 Pages) VBSEMI

Part #	UTT4407G-S08-R

Description	P-Channel 30-V (D-S) MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	VBSEMI [VBsemi Electronics Co.,Ltd]

Direct Link	www.VBsemi.com

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4 / 9 page

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

0.01

0.001

0.1

100

TJ = 25 °C

TJ = 150 °C

- 0.4

- 0.2

0.0

0.2

0.4

0.6

0.8

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

ID =5mA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.02

0.04

0.06

0.08

0.10

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

ID =10A

Time (s)

1000

0.1

0.01

0.001

100

Safe Operating Area

0.01

100

0.01

0.1

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

1ms

10 ms

100 ms

0.1110

TA = 25 °C

Single Pulse

Limited byRDS(on)*

10 s

100

UTT4407G-S08-R

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