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L2SC4617ST1G Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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L2SC4617ST1G Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 4 page  1 BASE COLLECTOR 3 NPN Silicon 2 EMITTER ! ! ! ! Absolute maximum ratings (Ta=25 °C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Parameter VCBO VCEO VEBO IC PC Tj Tstg 60 V V V A ˚C ˚C 50 7 0.15 W 0.15 150 −55~+150 Symbol Limits Unit ! ! ! ! Electrical characteristics (Ta=25 °C) Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 60 50 7 − − 120 − − − − − − − − − − 180 2.0 − − − 0.1 0.1 560 0.5 − 3.5 VIC =50µA IC =1µA IE =50µA VCB =60V VEB =7V VCE =6V, IC=1mA IC/IB =50mA/5mA VCE =12V, IE=2mA, f=30MHz VCB =12V, IE=0A, f=1MHz V V µA µA − V MHz pF Typ. Max. Unit Conditions SC-89 hFE values are classified as follows: Item Q R S hFE 120~270 180~390 270~560 ! ! ! !Device marking ! ! ! ! L2SC4617QT1G=BQ L2SC4617RT1G=BR L2SC4617ST1G=BS Device Marking Shipping BQ BR 3000 Tape & Reel 10000 Tape & Reel 3000 Tape & Reel 10000 Tape & Reel 3000 Tape & Reel 10000 Tape & Reel ORDERING INFORMATION BR BQ L2SC4617QT1G L2SC4617QT3G L2SC4617RT1G L2SC4617RT3G L2SC4617ST1G L2SC4617ST3G BS BS We declare that the material of product compliance with RoHS requirements. L2SC4617RLT1G Series general purpose transistors NPN Silicon 1 2 3 Rev : www.leiditech.com 01.06.2017 1/4 |
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